vsib420 thru vsib480 vishay general semiconductor document number: 89119 revision: 14-jul-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 new product single-phase single in -line bridge rectifier features ? ul recognition file number e312394 (qqqx2) ? ideal for printed circuit boards ? high surge current capability ? high case dielectric strength of 1500 v rms ? solder dip 260 c, 40 s ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for monitor, tv, printer, switching mode power supply, adapter, audio equipment, and home appliances applications. mechanical data case: gsib-3s epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on p.c.b. with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length primary characteristics i f(av) 4.0 a v rrm 200 v to 800 v i fsm 130 a i r 10 a v f 0.95 v t j max. 150 c case style gsib-3s + - ~ ~ +- ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vsib420 vsib440 vsib460 vsib480 unit maximum repetitive peak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400 600 800 v maximum average forward rectified output current at t c = 100 c t a = 25 c i f(av) 4.0 (1) 2.3 (2) a peak forward surge current single sine-wave superimposed on rated load i fsm 130 a rating for fusing (t < 8.3 ms) i 2 t70a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
new product vsib420 thru vsib480 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89119 revision: 14-jul-09 2 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on p.c.b. with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length (3) recommended mounting position is to bolt down on heatsink with si licone thermal compound for maximum heat transfer with #6 scre w ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol vsib420 vsib440 vsib460 vsib480 unit maximum instantaneous forward drop per diode (1) i f = 2.0 a t a = 25 c v f 0.95 v maximum reverse current per diode (2) rated v r t a = 25 c t a = 125 c i r 10 250 a thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vsib420 vsib440 vsib460 vsib480 unit maximum thermal resistance r ja r jc 26 (2) 5 (1) c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode vsib460-e3/45 4.0 45 20 tube figure 1. derating curve output rectified current case temperat u re (c) 4 0 0 75 150 a v erage for w ard o u tp u t c u rrent (a) 2 25 100 50 125 1 3 heatsink mo u nting, t c p.c.b. mo u nting, t a figure 2. maximum non-repetitive peak forward surge current per diode nu m b er of cycles at 60 hz 150 0 1 100 peak for w ard s u rge c u rrent (a) 50 10 25 75 100 125 1.0 cycle
new product vsib420 thru vsib480 vishay general semiconductor document number: 89119 revision: 14-jul-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse characteristics per diode instantaneo u s for w ard v oltage ( v ) 100 0.01 0.3 1.3 instantaneo u s for w ard c u rrent (a) 1.1 0.1 1 10 0.9 0.7 0.5 t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) 1000 0.01 20 100 instantaneo u s re v erse c u rrent ( a) 0.1 10 100 8 0 60 40 t j = 150 c t j = 125 c t j = 25 c 1 30 90 70 50 figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode re v erse v oltage ( v ) 1000 1 0.1 100 j u nction capacitance (pf) 10 100 10 1 t - heating time (s) 100 0.1 0.01 100 transient thermal impedance (c/ w ) 1 10 10 1 0.1 case style gsib-3s 0.996 (25.3) 0.972 (24.7) 0.157 (4.0) ref. 0.146 (3.70) 0.130 (3.30) 0.602 (15.3) 0.579 (14.7) 0.709 (1 8 .0) 0.669 (17.0) 0.303 (7.7) 0.2 8 7 (7.3) 0.057 (1.45) 0.041 (1.05) 0.0 8 3 (2.10) 0.067 (1.70) 0.043 (1.10) 0.035 (0.90) 0.075 (1.90) 0.059 (1.50) 0.150 (3. 8 0) 0.134 (3.40) 0.031 (0. 8 0) 0.024 (0.60) 0.114 (2.90) 0.09 8 (2.50) 0.1 8 9 (4. 8 0) 0.173 (4.40) 0.3 8 2 (9.70) 0.366 (9.30) ? 0.134 (3.40) ? 0.122 (3.10)
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